Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field-Reference-Cited by-同舟云学术

Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field

Published:2014-06 Issue:6 Volume:48 Page:722-726
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Makara V. A.,Steblenko L. P.,Korotchenkov O. A.,Nadtochiy A. B.,Kalinichenko D. V.,Kuryliuk A. N.,Kobzar Yu. L.,Krit A. N.,Naumenko S. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614060189.pdf

Reference17 articles.

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3. V. M. Maslovskii and S. N. Postnikov, in Proceedings of the 4th Scientific Technical Seminar on Processing by Pulse Magnetic Field (Methods and Technology) (Gor’kii, Sofiya, 1989), p. 5.

4. V. N. Buzykin, O. I. Datsko, and S. N. Postikov, Elektron. Obrab. Mater., No. 2, 16 (1993).

5. M. N. Levin and B. A. Zon, J. Exp. Theor. Phys. 84, 760 (1997).

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