Author:
Shevchenko V. Ya.,Perevislov S. N.,Ugolkov V. L.
Abstract
Abstract
The chemical processes occurring during the interaction of carbon (diamond) with silicon are experimentally investigated. Thermal analysis of the interaction of diamond with silicon is carried out. This made it possible to determine the mechanism of the synthesis of silicon carbide and subsequent reaction sintering of diamond particles based on Turing’s reaction-diffusion process and the formation of a microstructure consisting of triple periodic surfaces of the minimal energy.
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites
Reference34 articles.
1. Shevchenko, V.Ya., Glass and ceramics, in XXI. Perspektivy razvitiya (XXI. Development Prospects), St. Petersburg: Yanus, 2001.
2. Knippenberg, W.F., Growth phenomena in silicon carbide, Philips Res. Rep., 1963, vol. 18, pp. 161–274.
3. Ekstrom, T.C. and Gordeev, S.K., New carbide composites with extraordinary properties, Key Eng. Mater., 1999, pp. 75–80.
4. Park, J.S., Sinclair, R., Rowcliffe, D., Stern, M., and Davidson, H., Orientation relationship in diamond and silicon carbide composites, Diamond Relat. Mater., 2007, vol. 16, no. 3, pp. 562–565.
5. Liu, Y., Hu, C., Feng, W., Men, J., Cheng, L., and Zhang, L., Microstructure and properties of diamond/SiC composites prepared by tape-casting and chemical vapor infiltration process, J. Eur. Ceram. Soc., 2014, vol. 34, no. 15, pp. 3489–3498.
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