Radiation defects in n-6H-SiC irradiated with 8 MeV protons-Reference-Cited by-同舟云学术

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Radiation defects in n-6H-SiC irradiated with 8 MeV protons

Published:2000-08 Issue:8 Volume:34 Page:861-866
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lebedev A. A.,Veinger A. I.,Davydov D. V.,Kozlovskii V. V.,Savkina N. S.,Strel’chuk A. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188089.pdf

Reference19 articles.

1. V. V. Kozlovskii, S. I. Ponomarev, and I. A. Kozlovskaya, Pis’ma Zh. Tekh. Fiz. 20(2), 1 (1994) [Tech. Phys. Lett. 20, 46 (1994)].

2. A. O. Konstantinov, V. N. Kuz’min, L. S. Lebedev, et al., Zh. Tekh. Fiz. 54, 1622 (1984) [Sov. Phys. Tech. Phys. 29, 949 (1984)].

3. G. C. Rybicki, J. Appl. Phys. 78, 2996 (1995).

4. R. K. Nadela and M. A. Capano, Appl. Phys. Lett. 70, 886 (1997).

5. T. Dalibor, G. Pensl, H. Matsunami, et al., Phys. Status Solidi A 162, 199 (1997).

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