Dielectric response to a donor ion in aGa1−xAlxAs-GaAs-Ga1−xAlxAs quantum well of infinite depth
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.6498/fulltext
Reference11 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
3. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
4. Effect of nonparabolicity on the energy levels of hydrogenic donors inGaAs−Ga1−xAlxAsquantum-well structures
5. Binding energies of hydrogenic impurities in finite-quantum-well structures with effective-mass mismatch: Simple and accurate variational treatments
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2. A theoretical study of the effects of Thomas–Fermi and Hermanson’s dielectric functions and temperature on photoionization cross-section of a donor impurity in GaAs quantum dots of circular and rectangular cross-sections;The European Physical Journal B;2022-03
3. A theoretical study of variation of photoionization cross section of donor impurities in a GaAs quantum dot of cylindrical geometry with incident photon frequency, donor location along the dot axis and applied uniaxial stress;Revista Mexicana de Física;2019-12-28
4. Simultaneous effects of temperature and pressure on the donor binding energy in a V-groove quantum wire;Superlattices and Microstructures;2010-03
5. BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD;Surface Review and Letters;2002-10
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