Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.19.1015/fulltext
Reference44 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Capacitance Transient Spectroscopy
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. A feedback method for investigating carrier distributions in semiconductors
5. Long‐lifetime photoconductivity effect inn‐type GaAlAs
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