Influence of doping density on electronic transport in degenerate Si:Pδ-doped layers-Reference-Cited by-同舟云学术

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Influence of doping density on electronic transport in degenerate Si:Pδ-doped layers

Published:2006-01-03 Issue:3 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Goh K. E. J.,Oberbeck L.,Simmons M. Y.,Hamilton A. R.,Butcher M. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.035401/fulltext

Reference26 articles.

1. Nanoscale electronics based on two-dimensional dopant patterns in silicon

2. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

3. Effect of encapsulation temperature on Si:P δ-doped layers

4. Dopant electrical activity and majority-carrier mobility in B- and Sb-δ-doped Si thin films

5. Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 °C on Si (100) by molecular beam epitaxy

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