Anomalous variation of phonon Raman intensities near the metal-to-Mott-insulator transition in titanium oxide systems
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2704/fulltext
Reference11 articles.
1. Filling dependence of electronic properties on the verge of metal–Mott-insulator transition inSr1−xLaxTiO3
2. Optical-conductivity spectra ofSr1−xLaxTiO3: Filling-dependent effect of the electron correlation
3. Change of electronic structures with carrier doping in the highly correlated electron systemY1−xCaxTiO3
4. Doping- and pressure-induced change of electrical and magnetic properties in the Mott-Hubbard insulatorLaTiO3
5. Metal-insulator transition inLa1−xSrxTiO3andY1−xCaxTiO3investigated by specific-heat measurements
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