Reaction ofI2with the (001) surfaces of GaAs, InAs, and InSb. II. Ordering of the iodine overlayer-Reference-Cited by-同舟云学术

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Reaction ofI2with the (001) surfaces of GaAs, InAs, and InSb. II. Ordering of the iodine overlayer

Published:1996-07-15 Issue:3 Volume:54 Page:2114-2120
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Varekamp P. R.,Håkansson M. C.,Kanski J.,Björkqvist M.,Göthelid M.,Kowalski B. J.,He Z. Q.,Shuh D. K.,Yarmoff J. A.,Karlsson U. O.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2114/fulltext

Reference30 articles.

1. Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)

2. Br2adsorption on GaAs(110) and surface etching at low temperature

3. Surface core-level shifts for chlorine covered GaAs (1 1 0) surfaces

4. Chlorine chemisorption on and the onset of etching of cleaved GaAs(110) at room temperature

5. Prelude to etching: The surface interaction of chlorine on GaAs(110)

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching of GaAs(001) termination by action of molecular iodine;JETP Letters;2014-06

2. Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption;The Journal of Physical Chemistry C;2012-04-09

3. Evaluation of the donor ability of phenanthrolines in iridium complexes by means of synchrotron radiation photoemission spectroscopy and DFT calculations;Dalton Trans.;2007

4. Coupling versus Surface-Etching Reactions of Alkyl Halides on GaAs(100): I. CF3CH2I Reactions;Langmuir;2006-10-07

5. Chemically selective adsorption of molecular oxygen on GaAs(100)c(2×8);The Journal of Chemical Physics;2000-11-22

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