Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon-Reference-Cited by-同舟云学术

Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon

Published:2013-07-02 Issue:3 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hübers H.-W.,Pavlov S. G.,Lynch S. A.,Greenland Th.,Litvinenko K. L.,Murdin B.,Redlich B.,van der Meer A. F. G.,Riemann H.,Abrosimov N. V.,Becker P.,Pohl H.-J.,Zhukavin R. Kh.,Shastin V. N.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.035201/fulltext

Reference27 articles.

1. Silicon as a model ion trap: Time domain measurements of donor Rydberg states

2. Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon

3. Shallow impurity absorption spectroscopy in isotopically enriched silicon

4. Relaxation of excited donor states in silicon with emission of intervalley phonons

5. Theoretical intrinsic lifetime limit of shallow donor states in silicon

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