Pseudopotential calculations of band gaps and band edges of short-period(InAs)n∕(GaSb)msuperlattices with different substrates, layer orientations, and interfacial bonds-Reference-Cited by-同舟云学术

Pseudopotential calculations of band gaps and band edges of short-period(InAs)n∕(GaSb)msuperlattices with different substrates, layer orientations, and interfacial bonds

Published:2008-03-12 Issue:11 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Piquini Paulo,Zunger Alex,Magri Rita

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.115314/fulltext

Reference64 articles.

1. Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition

2. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition

3. Multiband coupling and electronic structure of(InAs)n/(GaSb)nsuperlattices

4. Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection

5. Optimization of mid-infrared InAs∕GaSb type-II superlattices

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