Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon

Published:1993-03-15 Issue:12 Volume:47 Page:7013-7024
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Isoya J.,Yamasaki S.,Okushi H.,Matsuda A.,Tanaka K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.7013/fulltext

Reference43 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. Defect states in doped and compensateda-Si: H

3. Hyperfine studies of dangling bonds in amorphous silicon

4. The Effects of H and F on the ESR Signals in a-Si

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