Electrical activity at grain boundaries ofCu(In,Ga)Se2thin films-Reference-Cited by-同舟云学术

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Electrical activity at grain boundaries ofCu(In,Ga)Se2thin films

Published:2005-01-06 Issue:3 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fuertes Marrón D.,Sadewasser S.,Meeder A.,Glatzel Th.,Lux-Steiner M. Ch.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.033306/fulltext

Reference15 articles.

1. Defects and transport in the wide gap chalcopyrite CuGaSe2

2. Kelvin probe force microscopy for the nano scale characterization of chalcopyrite solar cell materials and devices

3. Anomalous Grain Boundary Physics in PolycrystallineCuInSe2: The Existence of a Hole Barrier

4. Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells

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1. Electrochemical characteristics of grain boundaries in gadolinium and aluminum co-doped ceria and ceria-alumina composites;Solid State Ionics;2021-11

2. Grain Boundaries in Cu(In, Ga)Se 2 : A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy;Advanced Functional Materials;2021-07-16

3. The alterations of carrier separation in kesterite solar cells;Nano Energy;2018-10

4. Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering;ACS Applied Materials & Interfaces;2018-03-12

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