Determination of the Sb/Si(111) interfacial structure by back-reflection x-ray standing waves and surface extended x-ray-absorption fine structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.3475/fulltext
Reference11 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Photoelectron diffraction study of the atomic geometry of the Si(111)√3×√3-Sb surface
4. Low Energy Electron Diffraction and X-Ray Photoelectron Spectroscopy Studies of the Formation of Submonolayer Interfaces of Sb/Si(111)
5. Local bonding structure of Sb on Si(111) by surface extended x-ray-absorption fine structure and photoemission
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1. Ab initio study of the adsorption of antimony and arsenic on the Si(110) surface;Thin Solid Films;2010-10
2. Model for hydrogen-induced Sb atoms reconstruction √3 × √3 → 2 × 1 on Si(111);Journal of Physics: Conference Series;2008-03-01
3. Hydrogen-induced Sb atom reconstruction3×3→2×1on Si(111) as an example of a six-state model;Physical Review B;2007-03-14
4. Surface structure determination using x-ray standing waves;Reports on Progress in Physics;2005-03-09
5. Sb/Si(111)Adsorption: Hidden Phase Transitions Behind Langmuir-Like Isotherms;Physical Review Letters;2005-02-22
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