New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8452/fulltext
Reference16 articles.
1. Modification of optical properties of GaAs‐Ga1−xAlxAs superlattices due to band mixing
2. Band mixing in semiconductor superlattices
3. Interband optical transitions in GaAs-Ga1−xAlxAs and InAs-GaSb superlattices
4. Electronic structure of two-dimensional semiconductor systems
5. Valence band mixing in GaAs-(AlGa)As heterostructures
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