Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strainedInxGa1−xAslayers on InP(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.9271/fulltext
Reference24 articles.
1. Effect of strain on surface morphology in highly strained InGaAs films
2. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)
3. Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)
4. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers
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