Dynamical low-energy electron-diffraction analysis of bismuth and antimony epitaxy on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.8952/fulltext
Reference33 articles.
1. Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds
2. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
3. Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy
4. Sb/GaAs(110) interface: A reevaluation
5. New surface atomic structures for column V overlayers on the (110) surfaces of III–V compound semiconductors
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