First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.6158/fulltext
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1. Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence
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3. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
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5. Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica
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