Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.4176/fulltext
Reference27 articles.
1. Theoretical Aspects of Positrons in Imperfect Solids
2. Theory of positrons in solids and on solid surfaces
3. Positron states in Si and GaAs
4. Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy
5. Positron-annihilation spectroscopy of native vacancies in as-grown GaAs
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