Electronic properties of the AlAs-GaAs (001) interface and superlattice
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.19.6341/fulltext
Reference17 articles.
1. Superfine structures of semiconductors grown by molecular‐beam epitaxy
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3. Interdiffusion between GaAs and AlAs
4. Raman scattering and zone‐folding effects for alternating monolayers of GaAs‐AlAs
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