Role of silicon vacancies in yttrium-disilicide compounds from ab initio calculations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.13479/fulltext
Reference28 articles.
1. Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties
2. Epitaxial growth of rare‐earth silicides on (111) Si
3. Fabrication and structure of epitaxial Er silicide films on (111) Si
4. Interface structure of Si(111)-(√3 × √3)R30°-ErSi2 − x
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