Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.1944/fulltext
Reference49 articles.
1. Heterojunction interface formation: Si on Ge, GaAs, and CdS
2. Nature of the band discontinuities at semiconductor heterojunction interfaces
3. Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs
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