Extrinsic structure changes by STM at 65 K on Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.R16251/fulltext
Reference14 articles.
1. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy
2. Scanning tunneling microscopy of Si(001)
3. Atomic and Electronic Structures of Reconstructed Si(100) Surfaces
4. Direct observation of an increase in buckled dimers on Si(001) at low temperature
5. Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)
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2. Atomic scale study of corrugating and anticorrugating states on the bare Si(1 0 0) surface;Journal of Physics: Condensed Matter;2014-12-19
3. Structural Transition in Atomic Chains Driven by Transient Doping;Physical Review Letters;2013-10-08
4. Detecting and localizing surface dynamics with STM: a study of the Sn/Ge(111) and Sn/Si(111) α-phase surfaces;Journal of Physics: Condensed Matter;2010-06-14
5. Structural and electronic properties of Ge-Si, Sn-Si, and Pb-Si dimers on Si(001) from density-functional calculations;Physical Review B;2009-06-26
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