Impurity-related optical absorption from GaAs-(Ga,Al)As quantum wells under an applied electric field
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.4041/fulltext
Reference30 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
3. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
4. Shallow donor impurities in GaAs-Ga1−xAlxAs quantum-well structures: Role of the dielectric-constant mismatch
5. Effect of nonparabolicity on the energy levels of hydrogenic donors inGaAs−Ga1−xAlxAsquantum-well structures
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1. Simultaneous effects of temperature, pressure, polaronic mass, and conduction band non-parabolicity on a single dopant in conical GaAs-Al x Ga1–x As quantum dots;Physica Scripta;2021-04-14
2. Photoionization cross-section of donor impurity in spherical quantum dots under electric and intense laser fields;Journal of Luminescence;2014-01
3. Effects of hydrostatic pressure on intrawell and interwell excitons in a strained GaAs/GaAlAs double quantum well system;Physica E: Low-dimensional Systems and Nanostructures;2011-10
4. Polaronic excitons in a double-quantum-well semiconductor heterostructure;Superlattices and Microstructures;2010-06
5. OPTICAL ABSORPTION SPECTRA RELATED TO DONOR IMPURITIES IN GaAs/Ga1-xAlxAs RIDGE QUANTUM WIRE;Modern Physics Letters B;2009-12-10
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