Observation of direct and phonon-assisted indirect transitions inGaAs/GaxAl1−xAsmultiquantum wells under hydrostatic pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.6566/fulltext
Reference31 articles.
1. Raman Scattering Resonant with Quasi-Two-Dimensional Excitons in Semiconductor Quantum Wells
2. Luminescence studies of optically pumped quantum wells in GaAs-AlxGa1−xAsmultilayer structures
3. Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C
4. Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometry
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4. Hydrostatic pressure and electric-field effects on the electronic and optical properties of InAs spherical layer quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2012-09
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