Dynamical analysis of low-energy-electron-diffraction intensities from GaP(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.562/fulltext
Reference27 articles.
1. Structure determination for the (110) surface of zincblende structure compound semiconductors
2. Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions
3. Surface atomic geometry of covalently bonded semiconductors: InSb(110) and its comparison with GaAs(110) and ZnTe(110)
4. Dynamical analysis of low-energy-electron-diffraction intensities from InSb(110)
5. Trends in surface atomic geometries of compound semiconductors
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