Raman-scattering studies of aluminum nitride at high pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.2874/fulltext
Reference23 articles.
1. Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition
2. Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures
3. High pressure phase transition in aluminium nitride
4. High-pressure properties of wurtzite- and rocksalt-type aluminum nitride
5. High pressure phase transition in aluminium nitride
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