Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.085316/fulltext
Reference18 articles.
1. A new semiconductor superlattice
2. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
3. High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range
4. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
5. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
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