Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.8.4734/fulltext
Reference16 articles.
1. Effect of Carrier Concentration on the Raman Frequencies of Si and Ge
2. Effects of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. I. Acoustical Modes
3. Interaction between electronic and vibronic Raman scattering in heavily doped silicon
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