Raman spectroscopy study of ZnSe andZn0.84Fe0.16Se at high pressures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.13641/fulltext
Reference31 articles.
1. Pressure-Induced Phonon Frequency Shifts Measured by Raman Scattering
2. First and second order Raman scattering in GaP to 128 kbar
3. Structural studies of tetrahedrally-coordinated semiconductors at high pressure—New systematics
4. Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)
5. Pressure dependence of the lowest direct absorption edge of ZnSe
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