Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
Author:
Funder
Microsoft
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.7.056201/fulltext
Reference41 articles.
1. Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
2. Helical Liquids and Majorana Bound States in Quantum Wires
3. Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures
4. Hard gap in epitaxial semiconductor–superconductor nanowires
5. Epitaxy of semiconductor–superconductor nanowires
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