Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Author:

Pham Van Dong1ORCID,Pan Yi12ORCID,Erwin Steven C.34ORCID,von Oppen Felix5ORCID,Kanisawa Kiyoshi6,Fölsch Stefan1ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik

2. Xi'an Jiaotong University

3. Center for Computational Materials Science

4. Naval Research Laboratory

5. Freie Universität Berlin

6. NTT Basic Research Laboratories

Abstract

Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into N-dot chains with alternating tunnel coupling between them, quantum-dot molecules were constructed that revealed electronic boundary states as predicted by the Su-Schrieffer-Heeger (SSH) model of one-dimensional topological phases. Dot chains with odd N were constructed such that they host a single end or domain-wall state, allowing one to probe the localization of the boundary state on a given sublattice by scanning tunneling spectroscopy. We found probability density also on the forbidden sublattice together with an asymmetric energy spectrum of the chain-confined states. This deviation from the SSH model arises because the dots are charged and create a variation in on-site potential along the chain—which does not remove the boundary states but shifts their energy away from the midgap position. Our results demonstrate that topological boundary states can be created in quantum-dot arrays engineered with atomic-scale precision. Published by the American Physical Society 2024

Funder

Deutsche Forschungsgemeinschaft

National Key Research and Development Program of China

Publisher

American Physical Society (APS)

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