Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.78.4071/fulltext
Reference21 articles.
1. Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films
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