First-Principles Study of Boron Diffusion in Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.83.4345/fulltext
Reference29 articles.
1. Point defects and dopant diffusion in silicon
2. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon
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