Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.3382/fulltext
Reference19 articles.
1. Optical characterization of interface disorder in multi-quantum well structures
2. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
3. Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy
4. Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
5. Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells
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