Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials Using the Scanning Electron Microscope-Reference-Cited by-同舟云学术

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Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials Using the Scanning Electron Microscope

Published:2012-03-30 Issue:13 Volume:108 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Naresh-Kumar G.,Hourahine B.,Edwards P. R.,Day A. P.,Winkelmann A.,Wilkinson A. J.,Parbrook P. J.,England G.,Trager-Cowan C.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.108.135503/fulltext

Reference29 articles.

1. Dislocation Scattering in GaN

2. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

3. Threading dislocations in domain-matching epitaxial films of ZnO

4. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

5. Plan-view image contrast of dislocations in GaN

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2. Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction;Microscopy and Microanalysis;2023-11-08

3. Nanoscale Mapping of the Full Strain Tensor, Rotation, and Composition in Partially Relaxed InxGa1−xN Layers by Scanning X-ray Diffraction Microscopy;Physical Review Applied;2022-12-06

4. Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging;Journal of Applied Physics;2022-09-14

5. Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy;Journal of Applied Physics;2022-02-21

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