Polar discontinuities and interfacial electronic properties of Bi2O2Se on SrTiO3
Author:
Funder
National Natural Science Foundation of China
Westlake University
Westlake Multidisciplinary Research Initiative Center
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.108.245304/fulltext
Reference48 articles.
1. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
2. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se
3. Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals
4. 2D Bi2O2Se: An Emerging Material Platform for the Next-Generation Electronic Industry
5. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
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