Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb
Author:
Funder
Engineering and Physical Sciences Research Council
European Research Council
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.035207/fulltext
Reference111 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
2. Third-generation infrared photodetector arrays
3. Magnetoquantum Oscillations at THz Frequencies in InSb
4. Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications
5. Uncooled high‐speed InSb field‐effect transistors
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Underlying Effects of Temperature and Pressure on the Concentration of Carriers and Intrinsic Defects in the Bi2MoO6 Photocatalyst: A Hybrid Density Functional Study;The Journal of Physical Chemistry C;2024-07-31
2. First-principles calculation of intrinsic point defects and doping performance of MoSi<sub>2</sub>N<sub>4</sub>;Acta Physica Sinica;2024
3. DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector;physica status solidi (b);2023-09-27
4. Temperature, Doping, and Chemical Potential Tuning Intrinsic Defects Concentration in Bi2MoO6: GGA + U Method;ACS Omega;2023-06-02
5. Ballistic spin transport in DC-bias single top gate p-type narrow channel device with Zeeman–Rashba effects;Physica B: Condensed Matter;2023-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3