Overlayer growth and electronic properties of the Bi/GaSb(110) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.16822/fulltext
Reference61 articles.
1. LEED-AES-TDS characterization of Sb overlayers on GaAs(110)
2. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
3. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds
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5. Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface
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1. Mapping the evolution of Bi/Ge(111) empty states: From the wetting layer to pseudo-cubic islands;Journal of Applied Physics;2021-04-21
2. Occupied surface-state bands of the (1×2) ordered phase of Bi/InAs(110);Journal of Physics: Condensed Matter;2000-08-16
3. Ab initioinvestigation of Bi-covered GaSb(110) surfaces;Physical Review B;2000-01-15
4. A high-resolution spectroscopy study on bidimensional ordered structures: the (1 × 1) and (1 × 2) phases of Bi/InAs(110);Journal of Physics: Condensed Matter;1999-09-16
5. Gap-state formation in two-dimensional ordered Bi layers on InAs(110);Physical Review B;1998-08-15
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