Orientation-dependent strain effects on the metal-insulator transitions in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>(</mml:mo><mml:msub><mml:mi mathvariant="normal">V</mml:mi><mml:mrow><mml:mn>0.99</mml:mn></mml:mrow></mml:msub><mml:mrow><mml:msub><mml:mi mathvariant="normal">Cr</mml:mi><mml:mrow><mml:mn>0.01</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> thin films-Reference-Cited by-同舟云学术

Orientation-dependent strain effects on the metal-insulator transitions in (V0.99Cr0.01)2O3/Al2O3 thin films

Author:

Zhang G. D.,Hu L.^ORCID,Zhu M.,Wei R. H.^ORCID,Zhang R. R.,Song W. H.,Zhu X. B.,Sun Y. P.

Funder

Hefei Science Center, Chinese Academy of Sciences

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Physical Society (APS)

Link

Reference60 articles.

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