Surface metallization on Si(001) at elevated temperatures studied by angle-resolved photoemission spectroscopy and near-edge x-ray absorption fine structure: Effect of thermal adatoms-Reference-Cited by-同舟云学术

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Surface metallization on Si(001) at elevated temperatures studied by angle-resolved photoemission spectroscopy and near-edge x-ray absorption fine structure: Effect of thermal adatoms

Published:2009-10-20 Issue:15 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jeon C.,Hwang C. C.,Kang T.-H.,Kim K.-J.,Kim B.,Kim Y.,Noh D. Y.,Park C.-Y.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.153306/fulltext

Reference25 articles.

1. Temperature-induced metallization of the Si(100) surface

2. Phase Transition from Asymmetric to Symmetric Dimer Structure on the Si(001) Surface at High Temperature

3. Origin of surface metallization of Si(001) at high temperatures

4. Molecular dynamics simulations of the metallic behavior of the Si(001) surface at high temperatures

5. Origin of a surface state above the Fermi level on Ge(001) and Si(001) studied by temperature-dependent ARPES and LEED

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin controlled surface chemistry: alkyl desorption from Si(100)-2×1 by nonadiabatic hydrogen elimination;Physical Chemistry Chemical Physics;2020

2. Introduction to surface reconstruction and relaxation;Physics of Solid Surfaces;2018

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