Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.125302/fulltext
Reference25 articles.
1. Si/Ge nanostructures
2. Confinement and electron-phonon interactions of theE1exciton in self-organized Ge quantum dots
3. Large-qasymptotics of the random-bond Potts model
4. Electronic structure and compositional interdiffusion in self-assembled Ge quantum dots on Si(001)
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