Excitonic and impurity-related optical transitions in Be<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Al</mml:mi><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>multiple quantum wells: Fractional-dimensional space approach-Reference-Cited by-同舟云学术

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Excitonic and impurity-related optical transitions in Beδ-dopedGaAs∕AlAsmultiple quantum wells: Fractional-dimensional space approach

Published:2005-12-19 Issue:23 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kundrotas J.,Čerškus A.,Ašmontas S.,Valušis G.,Sherliker B.,Halsall M. P.,Steer M. J.,Johannessen E.,Harrison P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.235322/fulltext

Reference95 articles.

1. Off-resonant absorption in bound-to-continuump-typeGaAs/AlxGa1−xAsquantum wells: Overcoming absorption saturation with doping

2. Quantum-well infrared photodetectors

3. Terahertz quantum-well photodetector

4. Extrinsic photoluminescence from GaAs quantum wells

5. Electronic structure of beryllium acceptors confined inGaAs/AlxGa1−xAsquantum wells

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