Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies-Reference-Cited by-同舟云学术

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Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies

Published:2015-07-14 Issue:4 Volume:92 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mahani M. R.,MacDonald A. H.,Canali C. M.

Funder

Linnéuniversitetet

Vetenskapsrådet

Welch Foundation

U.S. Department of Energy

Lunds Universitet

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.92.045304/fulltext

Reference49 articles.

1. Spatial Structure of an Individual Mn Acceptor in GaAs

2. Spatial Structure of Mn-Mn Acceptor Pairs in GaAs

3. Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

4. Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)

5. Tunable Field Control Over the Binding Energy of Single Dopants by a Charged Vacancy in GaAs

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