Optical-reflectance anisotropy in epitaxial metastable (GaAs)1−x(Si2)x(001) alloys: A probe for the zinc-blende–to–diamond structural transition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14035/fulltext
Reference26 articles.
1. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys
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4. Growth of single‐crystal metastable semiconducting (GaSb)1−xGexfilms
5. Metastable (GaSb)(1−x)(Sn2)x alloys: Crystal growth and phase stability of single crystal and polycrystalline layers
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1. Data reduction for spatially resolved reflectance anisotropy spectrometer;Review of Scientific Instruments;2023-10-01
2. Study of percolation and modeling of the order–disorder transition for zincblende–diamond structures: Percolation and the existence of a unique band of events;Computational Condensed Matter;2014-12
3. Influence of growth direction on order-disorder transition in(GaAs)1−x(Si2)xalloys;Physical Review B;2001-12-13
4. Physical properties of(GaAs)1−x(Ge2)x: Influence of growth direction;Physical Review B;2001-03-02
5. Structural and compositional properties of epitaxial (GaAs) 1-x (Ge 2 ) x thin films grown by rf magnetron sputtering;SPIE Proceedings;2000-12-15
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