Surface relaxation and rumpling of Sn-doped β−Ga2O3(010)-Reference-Cited by-同舟云学术

Surface relaxation and rumpling of Sn-doped β−Ga2O3(010)

Published:2020-12-29 Issue:24 Volume:102 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pancotti A.^ORCID,Back T. C.^ORCID,Hamouda W.,Lachheb M.,Lubin C.,Soukiassian P.^ORCID,Boeckl J.,Dorsey D.^ORCID,Mou S.,Asel T.,Geneste G.,Barrett N.^ORCID

Funder

Horizon 2020

Agence Nationale de la Recherche

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.245306/fulltext

Reference43 articles.

1. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

2. Lateral β-Ga2O3 field effect transistors

3. Electron mobility in single‐ and polycrystalline Ga2O3

4. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

5. Synthesis, characterization and photocatalytic activity of β-Ga2O3 nanostructures

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