Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures-Reference-Cited by-同舟云学术

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Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

Published:2021-01-26 Issue:4 Volume:103 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chiaruttini F.,Guillet T.^ORCID,Brimont C.^ORCID,Scalbert D.^ORCID,Cronenberger S.^ORCID,Jouault B.^ORCID,Lefebvre P.^ORCID,Damilano B.^ORCID,Vladimirova M.^ORCID

Funder

Agence Nationale de la Recherche

Labex

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.045308/fulltext

Reference76 articles.

1. Electric field dependence of optical absorption near the band gap of quantum-well structures

2. Bose-Einstein statistics in thermalization and photoluminescence of quantum-well excitons

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonance energies and linewidths of Rydberg excitons in Cu2O quantum wells;Physical Review B;2024-04-26

2. Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion;Journal of Applied Physics;2024-03-01

3. Exciton-to-plasma Mott crossover in silicon;The European Physical Journal D;2024-03

4. On the semiconductor to metal transition in a quantum wire: Influence of geometry and laser;Modern Physics Letters B;2023-12-12

5. The influence of screening function on exciton mott transition in an asymmetric double quantum well;Modern Physics Letters B;2023-11-30

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