Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations-Reference-Cited by-同舟云学术

Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations

Published:2012-04-27 Issue:13 Volume:85 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fiedler J.,Heera V.,Skrotzki R.,Herrmannsdörfer T.,Voelskow M.,Mücklich A.,Facsko S.,Reuther H.,Perego M.,Heinig K.-H.,Schmidt B.,Skorupa W.,Gobsch G.,Helm M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.134530/fulltext

Reference56 articles.

1. Superconductivity in diamond

2. Superconductivity in doped cubic silicon

3. Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures

4. Superconductivity in diamond thin films well above liquid helium temperature

5. Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

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