High carrier mobility and strong electron–phonon coupling in graphene–WS<sub>2</sub> heterobilayers under pressure-Reference-Cited by-同舟云学术

High carrier mobility and strong electron–phonon coupling in graphene–WS₂ heterobilayers under pressure

Published:2023 Issue:44 Volume:11 Page:15555-15563
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhen Jiapeng¹²^ORCID,Huang Qiushi³,Liu Ying¹²,Zhang Shihui⁴^ORCID,Dong Hongliang⁴,Lv Kehong¹²,Qiu Jing¹²,Liu Guanjun¹²

Affiliation:

1. College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China

2. Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, China

3. Beijing Computational Science Research Center, Beijing 100093, China

4. Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China

Abstract

Graphene-TMD heterojunctions with strong electron–phonon coupling are expected in nano-photodetectors, yet the chemical doping hinders the performance of graphene, and the limited photoelectric conversion and lack of effective regulation of interlayer interactions hinder further research on heterostructures.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC03438K

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