High-performance III–VI monolayer transistors for flexible devices-Reference-Cited by-同舟云学术

High-performance III–VI monolayer transistors for flexible devices

Published:2020 Issue:13 Volume:22 Page:7039-7047
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Jianhui¹²³⁴⁵,Cai Shuchang¹²³⁴⁵,Xiong Rui¹²³⁴⁵,Sa Baisheng¹²³⁴⁵^ORCID,Wen Cuilian¹²³⁴⁵^ORCID,Wu Bo¹²³⁴⁵,Sun Zhimei⁶⁷⁸⁹⁵^ORCID

Affiliation:

1. Key Laboratory of Eco-materials Advanced Technology

2. College of Materials Science and Engineering

3. Fuzhou University

4. Fuzhou 350108

5. P. R. China

6. School of Materials Science and Engineering, and Center for Integrated Computational Materials Science

7. International Research Institute for Multidisciplinary Science

8. Beihang University

9. Beijing 100191

Abstract

The mechanical properties of group III–VI monolayers and sub-10 nm scale device performance of corresponding MOSFETs have been investigated by using density functional theory calculations as well as ab initio quantum transport simulations.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Fuzhou University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP00578A

Reference65 articles.

2. Two dimensional nanomaterials for flexible supercapacitors

3. Flexible All-Solid-State Supercapacitors based on Liquid-Exfoliated Black-Phosphorus Nanoflakes

4. Ultra-thin chips for high-performance flexible electronics

5. Van der Waals thin-film electronics

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