Tensile strain and finite size modulation of low lattice thermal conductivity in monolayer TMDCs (HfSe<sub>2</sub> and ZrS<sub>2</sub>) from first-principles: a comparative study-Reference-Cited by-同舟云学术

Tensile strain and finite size modulation of low lattice thermal conductivity in monolayer TMDCs (HfSe₂ and ZrS₂) from first-principles: a comparative study

Published:2023 Issue:13 Volume:25 Page:9225-9237
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Guofu¹,Bao Wenlong¹,Wang Zhaoliang¹^ORCID,Tang Dawei²

Affiliation:

1. Department of Energy and Power Engineering, China University of Petroleum, Qingdao 266580, China

2. Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China

Abstract

With excellent physical and chemical properties, 2D TMDC materials have been widely used in engineering applications, but they inevitably suffer from the dual effects of strain and device size, thermal transport inside the materials need to be further discussed.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP05432A

Reference50 articles.

1. Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures

2. Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS₂–BN–Graphene van der Waals Heterostructures

3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides